GHZ Si BiCMOS ACTIVE INDUCTORS

نویسندگان

  • J. Caldinhas Vaz
  • Luc Delage
  • J. Costa Freire
چکیده

The limitations on the implementation of BiCMOS active inductors at 2GHz are described. The circuit is based on a two BJT feedback configuration. Two types of biasing circuits were used: active bias and resistive bias. With 0.8μm BiCMOS standard technology is possible to obtain up to a few nanohenry inductance with a Q close to 3 at 2GHz. Two MMIC were studied.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Chip-Package Co-Design of a 4.7 GHz VCO

Future wireless communication applications require low-power and highly integrated transceiver solutions. The integration of the RF front-end poses a great challenge, in particular, as traditional implementations require a large number of external passive components. “Single-package” integration of complete transceivers based on an MCM-D technology with integrated passives is presented in this ...

متن کامل

A Coplanar Waveguide On-chip RF Choke for WLAN RF Circuits

A novel on-chip RF choke at 5 GHz is designed and measured for a class A operating Wireless LAN RF power amplifier (PA). The coplanar waveguide (CPW) based on-chip RF choke is implemented as an alternative component to inductors provided by the 0.35 μm SiGe BiCMOS technology. The CPW RF choke is designed at 5 GHz, and has a length of 1600 um and loaded with a capacitance of 0.95 pF. The measure...

متن کامل

A COMPARISON OF SILICON AND III−V TECHNOLOGY PERFORMANCE AND BUILDING BLOCK IMPLEMENTATIONS FOR 10 AND 40 Gb/s OPTICAL NETWORKING ICs

Scalable models for both active and passive components are essential for the design of highly integrated fiber−optic physical layer ICs. This paper focuses on the various technology options available for 10 Gb/s and 40 Gb/s applications, on how their constituent components are modeled and what the characteristics and requirements are for the basic building blocks. As part of the technology comp...

متن کامل

A 16-GHz Ultra-High-Speed Si–SiGe HBT Comparator

This paper presents an improved master–slave bipolar Si–SiGe HBT comparator design for ultra-high-speed data converter applications. The latch is maintained during the track stage facilitating quick transition back to the latch stage, increasing the sampling speed of the comparator. Implemented in a 0.5m 55-GHz BiCMOS Si–SiGe process, this comparator consumes approximately 80 mW with sampling s...

متن کامل

Cancellation of Series-Loss Resistance in UWB Active Inductors using RC Feedback

One of the most important features of the Active Inductors (AIs) is their input equivalent resistance, namely series-loss resistance, which should be low enough to have a high Quality Factor (QF). Most of the previous methods by this goal did not yield a high enough QF. This paper presents a new method, namely applying an RC feedback, to cancel series-loss resistance entirely. As the RC fee...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2001